Silicon wafers
Evaluate rapid annealing, post-implant activation, contact alloying and selected oxidation or reflow steps.
PROCESS DEVELOPMENTSEMICONDUCTOR THERMAL PROCESSING
Precise heat.
Short cycles.
RTP-Table-6 desktop rapid thermal processing furnace for controlled annealing of silicon, silicon carbide and research-stage sapphire samples.
Single-wafer processingUp to 6-inch / 150 mm
01 / RTP SERIESTABLETOP SYSTEM
RTPTable-6
Rapid Thermal Processing
Rapid Thermal Processing
1,200°C*Listed maximum temperature
150°C/s*Programmable ramp, no tray
±5°CUniformity at ≤500°C
150 mmMaximum wafer diameter
MATERIALS & PROCESS FIT
Built around the
wafer in your process.
A compact, single-wafer platform for thermal steps where ramp profile, atmosphere and repeatability matter. Start with your substrate and recipe; we will help define a configuration for evaluation.
Silicon carbide
Optional SiC tray configuration for wide-bandgap material process studies. Tray and ramp rate depend on wafer format.
OPTIONAL SIC TRAYSapphire substrates
Assess sample geometry, carrier compatibility and thermal measurement approach before confirming a recipe.
APPLICATION EVALUATIONMaterial suitability depends on the process recipe, carrier, atmosphere and temperature measurement. Sapphire process compatibility requires application review.
CHAMBER / SAMPLE STAGECONTROLLED HEATING, COMPACT FORMAT
Designed for a
repeatable thermal cycle.
Infrared halogen heating, programmable PID control and a parallel gas path work together to support short, controlled wafer processes.
01+
Rapid infrared heating
Halogen lamps with PID control support programmable ramp profiles and recipe-based processing.
02+
Even gas delivery
Parallel gas flow introduces process gas near the wafer surface to help limit cold spots.
03+
Atmosphere options
Atmospheric or vacuum chamber configurations, with MFC-controlled gas paths.
04+
Operator protection
Listed protections include door-temperature interlock, controller access protection and emergency stop.
PROCESS WINDOW
From ramp to
controlled cool-down.
HIGHTEMP.LOW
RAMPPROGRAMMABLE HOLDCOOLTIME
Illustrative only. Final profile depends on sample, tray, setpoint and process conditions.
RTP-TABLE-6 / TECHNICAL DATA
Know the
operating envelope.
Reference values from the available product specification. Confirm the selected configuration and guaranteed test conditions before purchase.
Request a configuration review| Maximum sample | 6-inch wafer or up to 150 × 150 mm |
|---|---|
| Temperature range | Room temperature to 1,200°CConfiguration-dependent; verify final specification |
| Heating rate | Up to 150°C/s without loading plate20°C/s listed with SiC tray |
| Temperature uniformity | ±5°C at ≤500°C; ±1% above 500°C |
| Temperature repeatability | ±1°C listedSpecification versions differ; confirm guaranteed value |
| Cooling rate | Approx. 200°C/min from 1,000°C to 400°CNot programmable |
| Chamber & control | Water-cooled chamber; fast PID; industrial PC control |
| Atmosphere | Atmospheric or vacuum configuration; 2 standard MFC gas paths |
| Dimensions / weight | 900 × 680 × 780 mm / approx. 100 kg |
| Power | 3-phase, 380 V, 50 Hz, 100 A |
*The supplied materials contain variant values for maximum temperature (800°C / 1,200°C) and repeatability (±1°C / ±2°C). The values above are listed with a configuration-confirmation note. Obtain the final technical specification in writing.
QUESTIONS, ANSWERED
Technical FAQ
For a process-specific review, send your wafer size, material and target thermal profile.
01What is the RTP-Table-6 used for?
It is a desktop rapid thermal processing system for short, controlled heating cycles such as wafer annealing, dopant activation studies, contact alloying and selected oxidation or nitride-related processes.
02Which wafer materials can be evaluated?
The system is intended for semiconductor wafers and samples. Silicon and silicon carbide are supported by the listed wafer and optional SiC tray configurations. Sapphire applications should be evaluated against the required recipe, carrier and temperature measurement method.
03What is the maximum sample size?
The listed maximum is a 6-inch wafer or a sample up to 150 × 150 mm. Fixture and carrier compatibility should be confirmed for non-round samples.
04What temperature range is specified?
The detailed RTP-Table-6 specification lists room temperature to 1,200°C. A separate product brochure lists 800°C, so the applicable maximum must be confirmed in the final configuration and quotation.
05What is the maximum heating rate?
The listed programmable rate is up to 150°C/s without a loading plate. A specification also lists 20°C/s with a SiC tray. Actual ramp rate depends on the sample, tray and recipe.
06How uniform is the temperature?
The listed temperature uniformity is ±5°C at or below 500°C and ±1% above 500°C. Measurement conditions and wafer setup should be agreed for the target process.
07What is the temperature repeatability?
Available specification versions list ±1°C and ±2°C. Confirm the guaranteed value and test conditions for the exact equipment configuration before ordering.
08Can the process hold time be programmed?
Yes. The holding duration can be programmed according to the process requirement.
09How is the wafer heated?
The system uses infrared halogen lamps. Lamp power is controlled with PID temperature control.
10How is the wafer cooled?
The listed substrate cooling method uses nitrogen purging. The approximate cooling rate is 200°C/min from 1,000°C to 400°C and is not programmable.
11Does the system support vacuum processing?
Atmospheric-pressure and vacuum chamber configurations are listed. Vacuum hardware and pump options should be specified for the intended process.
12How many process gas lines are included?
The specification lists two standard gas paths with MFC control. Additional gas channels can be discussed as a configuration option.
13Is a SiC wafer tray included?
A SiC tray is listed as an option in the product specifications. Confirm included accessories and tray diameter in the commercial quotation.
14Can the RTP-Table-6 process sapphire wafers?
Sapphire is not explicitly listed as a qualified material in the supplied equipment specification. The process should be evaluated for wafer size, thermal recipe, carrier compatibility and temperature measurement before confirming suitability.
15What applications are listed for the system?
Listed rapid thermal processing applications include oxide or nitride growth, silicide alloy annealing, ohmic-contact alloying, oxidation reflow and post-ion-implant annealing. Final suitability depends on the recipe and process gases.
16What is the equipment footprint?
The listed dimensions are 900 × 680 × 780 mm (width × depth × height), with adjustable leveling feet.
17What are the electrical requirements?
The listed power requirement is three-phase 380 V, 50 Hz, 100 A. Confirm local facility compatibility before installation.
18Does the furnace require water cooling?
The specification describes a water-cooled chamber with an independent cooling source. A water chiller is listed as an option; confirm the selected cooling arrangement and facility requirements.
19What safety features are listed?
The product material describes door-temperature interlock protection, temperature-controller access protection and an emergency stop. Confirm the final safety configuration during technical review.
20How can I request a quotation or process review?
Use the inquiry form on this page or contact Shanghai Xinkehui New Materials Co., Ltd. at risinn@xinkehui.cn or +86 132 6287 9223. Include wafer material, diameter, target temperature, ramp rate, atmosphere and hold time.
START A PROCESS CONVERSATION
Let's map your
thermal window.
Share the substrate and process target. Our team will follow up on equipment configuration and feasibility.